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Induced Changes in Thin Layers of As-S System Deposited by Spin Coating and Thermal Evaporation

Authors: Šlang Stanislav | Loghina Liudmila | Pálka Karel | Vlček Miroslav

Year: 2015

Type of publication: ostatní - přednáška nebo poster

Page from-to: nestránkováno

Titles:

Language	Name	Abstract	Keywords
eng	Induced Changes in Thin Layers of As-S System Deposited by Spin Coating and Thermal Evaporation	Chalcogenide glasses are compounds of 16th periodic group elements (S, Se and Te) with other elements (usually Ga, Ge, As or Sb). Chalcogenide glasses and thin layers are useful to many practical applications especially for the fabrication of high index infrared (IR) optical elements such as optical fibers, planar waveguides or recording discs. Thin layers of chalcogenide glasses are usually deposited by thermal evaporation, sputtering or pulse laser deposition, which require high vacuum. The layers produced by these physical deposition techniques are known for their photosensitivity due to the presence of localized defects in their structure. The photosensitivity can be a drawback for some applications. Thus chemical methods such as spin coating are recently gaining attention. The structure of spin coating deposited thin layers is closer to that of the original bulk glasses. Even more spin coating method is low cost and simpler (no need for high vacuum). A common drawback of spin coated thin layers is the presence of residual organic solvent, which can be reduced in principle by post-deposition annealing. The structure, refractive index and optical bandgap of as-prepared, annealed and exposed thin chalcogenides layers (stoichiometric As40S60 and sulfur rich As30S70) deposited by thermal evaporation and spin-coating were compared and presented.