Publication detail

Crystal growth in (GeS2)(x)(Sb2S3)(1-x) thin films

Authors: Barták Jaroslav | Podzemná Veronika | Málek Jiří | Eising Gert | Kooi Bart J.

Year: 2015

Type of publication: článek v odborném periodiku

Name of source: Journal of Non-Crystalline Solids

Publisher name: Elsevier Science BV

Place: Amsterdam

Page from-to: 7-13

Titles:

Language	Name	Abstract	Keywords
cze	Růst krystalů v tenkých filmech (GeS2)(x)(Sb2S3)(1-x)	Izotermní růst krystalů Sb2S3 v tenkých filmech systému (GeS2)(x)(Sb2S3)(1-x) byl sledován pomocí statické a vysokorychlostní optické mikroskopie v širokém teplotním rozsahu 480-625 K.	růst krystalů; Ge-Sb-S; tenké filmy; optická mikroskopie
eng	Crystal growth in (GeS2)(x)(Sb2S3)(1-x) thin films	The isothermal crystal growth kinetics of Sb2S3 in (GeS2)(x)(Sb2S3)(1 - x) thin films (x = 0.1, 0.2 and 0.3) has been investigated by static and high speed optical microscopy in a wide temperature range of 480-625 K allowing measurement of growth rates over four orders of magnitude. The formed crystals developed linearly with time, which is associated with crystal growth controlled by liquid-crystal interface kinetics. The appropriate growth model was derived from the dependence of reduced crystal growth rate on undercooling of the system, indicating that the 2D surface nucleated growth model is operative in this particular case. Thermodynamic and kinetic aspects are discussed.	Crystal growth; Ge-Sb-S; Thin films; Optical microscopy

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