Publication detail

Amorphous Ge-As-Te thin films prepared by Pulsed Laser Deposition – A photostability study

Authors: Bouška Marek | Hawlová Petra | Nazabal Virginie | Beneš Ludvík | Němec Petr

Year: 2015

Type of publication: článek ve sborníku

Name of source: PHOTOPTICS 2015, Proceedings of the 3rd International Conference on Photonics, Optics and Laser Technology, Volume 1

Publisher name: SciTePress - Science and Technology Publications

Place: Porto

Page from-to: 103-107

Titles:

Language	Name	Abstract	Keywords
cze	Amorfní Ge-As-Te tenké filmy připravené PLD- Studium fotostability	Příprava tenkých filmů Ge-As-Te pomocí PLD a studium jejich fotostability. Fotostabilita připravených i ozářených vrstev byla studována pomocí spektroskopické elipsometrie.	amorfní chalkogenidy; tenké filmy; Ge-As-Te; fotostabilita
eng	Amorphous Ge-As-Te thin films prepared by Pulsed Laser Deposition – A photostability study	Pulsed laser deposition was used for the fabrication of amorphous thin films from Ge-As-Te system with the aim to study their intrinsic photostability. Photostability of prepared layers was studied using spectroscopic ellipsometry within as-deposited as well as relaxed layers. For irradiation, laser sources operating at three energies (1.17, 0.92 and 0.8 eV) in band gap region of the studied materials were employed. The lowest values of photorefraction (refractive index changes) accompanied with lowest changes of band gap values present Ge20As20Te60 thin films, which are therefore considered as the layers with highest photostability, especially in relaxed state.	Amorphous Chalcogenide; Thin Films; Ge-As-Te; Photostability

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