Publication detail

Pulsed Laser Deposited GeTe-Rich GeTe-Sb2Te3 Thin Films

Year: 2015

Type of publication: článek ve sborníku

Name of source: ICALEO 2015 Proceedings

Publisher name: Laser Institut of America

Place: Orlando

Page from-to: 161-161

Titles:

Language	Name	Abstract	Keywords
cze	PLD GeTe bohatých GeTe-Sb2Te3 tenkých filmů	V posledních letech byly významně studovány pseudobinární systémy (GeTe)x(Sb2Te3)1−x (GST) nebo AgInSbTe díky jejich rychlým transformačním změnám mezi amorfní a krystalickou fází.	Ge-Sb-Te, tenké filmy, PLD, spektroskopická elipsometrie
eng	Pulsed Laser Deposited GeTe-Rich GeTe-Sb2Te3 Thin Films	During the last decades, the thin films from pseudobinary (GeTe)x(Sb2Te3)1−x (GST) or AgInSbTe system have been deeply investigated. The main reason for high scientific interest in this class of materials is the fact that these materials are able to transform quickly and reversibly between amorphous and crystalline (disorder-order) phases. Phase transition can be reversibly switched by varying the electric field or temperature when heating is done using a laser pulse in optical recording applications. The unique characteristics of phase change GST materials are based on huge optical reflectivity (up to 30%) or electrical conductivity (several orders of magnitude) changes proceeding upon phase transition. A typical material used in early optical discs was Ge2Sb2Te5 (i.e. 2GeTe-Sb2Te3). Other important composition from GST system is Ge8Sb2Te11, known as a material for the third generation optical storage (Blu-ray disks).	Ge-Sb-Te, thin films, pulsed laser deposition, spectroscopic ellipsometry

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