Login for students

Login for employees

Publication detail

Amorphous-to-crystalline transition in Ge8Sb(2-x)BixTe11 phase-change materials for data recording
Authors: Svoboda Roman | Karabyn Vasyl | Málek Jiří | Frumar Miloslav | Beneš Ludvík | Vlček Milan
Year: 2016
Type of publication: článek v odborném periodiku
Name of source: Journal of Alloys and Compounds
Publisher name: Elsevier Science SA
Place: Lausanne
Page from-to: 63-72
Titles:
Language Name Abstract Keywords
cze Fázová změna amorfizace-krystalizace v Ge8Sb(2-x)BixTe11 materiálu pro záznam dat Krystalizační chování tenkého filmu Ge(8)Sb((2-x))Bi(x)Te(11) bylo studováno vzhledem k možnému využití daného materiálu jako PCM pro záznam informací. Byl sledován vliv změny složení na proces krystalizace-amortizace. amorfní materiály; materiály pro ukládání dat; XRD; kalorimetrie
eng Amorphous-to-crystalline transition in Ge8Sb(2-x)BixTe11 phase-change materials for data recording Structural and thermokinetic analyses were used to study the crystallization behavior of Ge(8)Sb((2-x))Bi(x)Te(11)thin films, promising materials for phase-change memory recording applications. By exploring the full compositional range, it was found that the Sb -> Bi substitution leads to a decrease of crystallization enthalpy and activation energy of the main crystallization phase-change process. These trends were explained in terms of the changing structural ordering within the recently proposed new phase-change atomic switching mechanism. All of the compositions exhibited very similar transformation kinetics, confirming the uniformity of the phase-change mechanisms involved. It was further shown that rapid energy delivery achieved during heating, in the case of all investigated materials, leads to a transition from the classical nucleation/growth-based formation of 3D crystallites towards an autocatalytic phase-change process with an enormously increased speed of crystallization. Rapidity of the crystallization process was quantified for all of the studied compositions based on a novel Index of Crystallization Rapidity criterion - the results provided by this criterion showed that the highest crystallization speed was produced by the Ge8Sb0.8Bi1.2Te11 composition, which therefore from this point of view appears to be a suitable candidate for the new generation of phase-change memory recording devices. Amorphous materials; Data storage materials; X-ray diffraction; Calorimetry

Departments

Other Parts

Map

en.mapy.cz

Services

Popular Links

© 2023 University of Pardubice, Studentská 95, 532 10 Pardubice 2
Phone: +420 466 036 111, 466 036 112, 466 036 113
Webmaster, RSS
Data box ID: f5vj9hu
Accessibility Statement
CC BY-NC-ND 4.0Creative CommonsAttributionNonCommercialNoDerivatives