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Pulsed laser deposited GeTe-rich GeTe-Sb2Te3 thin films
Authors: Bouška Marek | Pechev S. | Simon Q. | Boidin Rémi | Nazabal Virginie | Gutwirth Jan | Baudet Emeline | Němec Petr
Year: 2016
Type of publication: článek v odborném periodiku
Name of source: Scientific Reports
Publisher name: Nature Publishing Group
Place: London
Page from-to: "26552-1"-"26552-10"
Titles:
Language Name Abstract Keywords
cze GeTe bohaté tenké vrstvy GeTe-Sb2Te3 deponované pulzním laserem Pulzní laserová depozice byla použita pro přípravu GeTe bohatých amorfních tenkých vrstev GeTe-Sb2Te3 (Ge6Sb2Te9, Ge8Sb2Te11, Ge10Sb2Te13 a Ge12Sb2Te15). Pro určení vlivu obsahu GeTe v deponovaných tenkých vrstvách na fyzikálně-chemické vlastnosti Ge-Sb-Te materiálů byly panenské (amorfní) a temperované (krystalické) vrstvy charakterizovány skenovací elektronovou mikroskopií s energiově-disperzní rentgenovou analýzou, rentgenovou difrakcí a reflektometrií, mikroskopií atomárních sil, spektroskopií Ramanova rozptylu, optickou reflektivitou a teplotními závislostmi plošného elektrického odporu. fázová změna; tenké vrstvy; chalkogenidy; pulzní laserová depozice
eng Pulsed laser deposited GeTe-rich GeTe-Sb2Te3 thin films Pulsed laser deposition technique was used for the fabrication of Ge-Te rich GeTe-Sb2Te3 (Ge6Sb2Te9, Ge8Sb2Te11, Ge10Sb2Te13, and Ge12Sb2Te15) amorphous thin films. To evaluate the influence of GeTe content in the deposited films on physico-chemical properties of the GST materials, scanning electron microscopy with energy-dispersive X-ray analysis, X-ray diffraction and reflectometry, atomic force microscopy, Raman scattering spectroscopy, optical reflectivity, and sheet resistance temperature dependences as well as variable angle spectroscopic ellipsometry measurements were used to characterize as-deposited (amorphous) and annealed (crystalline) layers. Upon crystallization, optical functions and electrical resistance of the films change drastically, leading to large optical and electrical contrast between amorphous and crystalline phases. Large changes of optical/electrical properties are accompanied by the variations of thickness, density, and roughness of the films due to crystallization. Reflectivity contrast as high as similar to 0.21 at 405 nm was calculated for Ge8Sb2Te11, Ge10Sb2Te13, and Ge12Sb2Te15 layers. phase-change; thin films; chalcogenides; pulsed laser deposition

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