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Fabrication and characterization of (GeTe):(Sb2Te3) (6:1, 8:1, 10:1, and 12:1) phase change memory thin films
Authors: Bouška Marek | Pechev S. | Simon Q. | Boidin Rémi | Nazabal Virginie | Gutwirth Jan | Baudet Emeline | Němec Petr
Year: 2016
Type of publication: ostatní - přednáška nebo poster
Page from-to: nestránkováno
Titles:
Language Name Abstract Keywords
eng Fabrication and characterization of (GeTe):(Sb2Te3) (6:1, 8:1, 10:1, and 12:1) phase change memory thin films Fabrication and characterization of (GeTe):(Sb2Te3) (6:1, 8:1, 10:1, and 12:1) phase change memory thin films is reported.