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Photoluminescence and Photon Upconversion in Rare-Earth-Doped Chalcogenides Prepared by Various Processes

Authors: Wágner Tomáš | Střižík Lukáš | Weissová Veronika | Oswald Jiří | Přikryl Jan | Himics Dianna | Sakaguchi Isao

Year: 2016

Type of publication: ostatní - přednáška nebo poster

Page from-to: nestránkováno

Titles:

Language	Name	Abstract	Keywords
eng	Photoluminescence and Photon Upconversion in Rare-Earth-Doped Chalcogenides Prepared by Various Processes	Rare-earth-doped chalcogenides are perspective materials for photonic applications such as optical amplifiers, waveguides, energy converters, sensors and detectors. This is due to their unique properties: high refractive index, low phonon energy, broad transparency from visible to mid-infrared spectral region. Moreover, chalcogenides can be relatively easily prepared in form of bulks as well as thin films. Rare-earth-doped chalcogenide thin films are usually deposited from bulk glasses prepared by conventional melt-quenching technique however, due to the large difference in the evaporation rates of chalcogenide and rare-earth atoms excludes the deposition of RE-doped films by thermal evaporation. On the other hand, the ion implantation can overcome this difficulty. Nowadays, the great attention is also paid to devices prepared by printing technique on flexible substrates which requires solution-based processes. We present all of above mentioned fabrication techniques for preparation of rare-earth-doped chalcogenides focused on their spectroscopic properties: I) Ga-GeSb-S: Er3+/Yb3+ melt-quenched glasses with attention to upconversion emission and 1.5 μm emission, II) Eu- or Bi-doped Ge-Sb-S films for 0.6 and 1.3 μm emissions, and III) Er- or Tb-doped As-S films prepared by spincoating technique for photoluminescence applications.	chalcogenide glass; ion implantation; up-conversion photoluminescence; spin-coating