University of PardubiceFaculty of Chemical Technology

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Investigation of the resistive switching in AgxAsS2 layer by conductive AFM

Authors: Zhang Bo | Kutálek Petr | Knotek Petr | Hromádko Luděk | Macák Jan | Wágner Tomáš

Year: 2016

Type of publication: ostatní - přednáška nebo poster

Page from-to: nestránkováno

Titles:

Language	Name	Abstract	Keywords
eng	Investigation of the resistive switching in AgxAsS2 layer by conductive AFM	Conducting-Bridge Random-Access Memory (CBRAM) or programmable metallization cell (PMC) shows a great promise for future non-volatile solid state memories. The basic mechanism of resistive switching involves creation of the conductive filament across the layer with suitable composition after application of a voltage pulse on the layer. In this presentation, a study of resistive switching in AgxAsS2 layer, based on a utilization of conductive atomic force microscope (AFM), is reported. As the result of biasing, two distinct regions were created on the surface (the conductive region and non-conductive region). Both were analyzed from the spread current maps. The volume change, corresponding to the growth of Ag particles, was derived from the topological maps, recorded simultaneously with the current maps. Based on the results, a model explaining the mechanism of the Ag particle and Ag filament formation was proposed from the distribution of charge carriers and Ag ions.	resistive switching; AgxAsS2; thin films; conductive AFM