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Phase transformation induced in Ge8Sb2-xBixTe11 thin films by single femtosecond pulses

Authors: Karabyn Vasyl | Přikryl Jan | Tveryanovich Yu S | Bezdička P | Frumarová Božena | Wágner Tomáš | Frumar Miloslav

Year: 2017

Type of publication: ostatní - přednáška nebo poster

Page from-to: nestránkováno

Titles:

Language	Name	Abstract	Keywords
eng	Phase transformation induced in Ge8Sb2-xBixTe11 thin films by single femtosecond pulses	Optical recording was the first demonstrated in 1992 with using ultrashort laser pulses. The advantage of this technology is that ultrafast lasers have potentials to resolve the heat diffusion limitation of the conventional laser recording, achieving high area recording densities. The comprehension of the structural transformation dynamics in timescales ranging from nanoseconds to femtoseconds has helped in improving the material performance [1−6]. In this work, we investigated the phase transformation of Ge8Sb2-xBixTe11 (were x=0, 1, 2) thin films from the amorphous phase into the crystalline phase. Coherent TiSapphire regenerative amplifier system was used to generate pump pulses of 800 nm wavelength, 40 femtosecond (fs) duration. The pulse energy window for crystallization in the thin films with thickness 100 nm prepared by Flash Thermal Evaporation (FTE) was established. The phase transition induced by the single and double femtosecond shots in the active Ge8Sb2-xBixTe11 layer was examined and characterized using optical microscopy and X-ray diffraction (XRD). The X-ray diffraction pattern confirmed the crystalline structure of thin films after single fs shot.	GeSb-BiTe, thin films, femtosecond pulses