Publication detail

Nucleation and crystal growth in (GeS2)0.1(Sb2S3)0.9 thin films

Authors: Martinková Simona | Barták Jaroslav | Shánělová Jana | Málek Jiří

Year: 2017

Type of publication: ostatní - článek ve sborníku

Name of source: Termoanalytický seminář TAS 2017 : sborník příspěvků

Publisher name: Česká společnost chemická

Place: Praha

Page from-to: 96-98

Titles:

Language	Name	Abstract	Keywords
eng	Nucleation and crystal growth in (GeS2)0.1(Sb2S3)0.9 thin films	The nucleation in (GeS2)0.1(Sb2S3)0.9 thin films was studied using single-stage microscopy measurement. The temperature range in which the measurements were performed was from 245°C to 300 °C. The studied system exhibits homogenous nucleation. The nucleation can be described in terms of classical nucleation theory. Temperature dependence of nucleation and crystal growth rtes were found to be significantly overlapping.	nucleation; chalcogenide glass; microscopy

Search