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Ge-Sb-Te phase change memory thin films fabricated by pulsed laser deposition: large (GeTe):(Sb2Te3) ratio
Authors: Bouška Marek | Pechev S. | Simon Q. | Nazabal Virginie | Gutwirth Jan | Němec Petr
Year: 2018
Type of publication: ostatní - přednáška nebo poster
Page from-to: nestránkováno
Titles:
Language Name Abstract Keywords
eng Ge-Sb-Te phase change memory thin films fabricated by pulsed laser deposition: large (GeTe):(Sb2Te3) ratio Ge-Sb-Te phase change memory thin films with large (GeTe):(Sb2Te3) ratio fabricated by pulsed laser deposition were characterized and their properties were discussed.