University of PardubiceFaculty of Chemical Technology

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Investigation of stability of Tl-doped SnS

Authors: Čermák Patrik | Plecháček Tomáš | Hejtmánek Jiří | Levinský Petr | Svoboda Roman | Olmrová Zmrhalová Zuzana | Pálka Karel | Beneš Ludvík | Šraitrová Kateřina | Drašar Čestmír

Year: 2018

Type of publication: ostatní - přednáška nebo poster

Page from-to: nestránkováno

Titles:

Language	Name	Abstract	Keywords
eng	Investigation of stability of Tl-doped SnS	SnS is an eco-friendly analog of SnSe [1, 2], a very promising thermoelectric material of recent years. However, a stable and effective doping of this compound is still questionable [3]. According to our observation, the main obstacles here are very low solubility of dopants and destabilization of SnS structure due to foreign species (important issue for photovoltaic applications). Regarding a reasonable 60 % doping efficiency of Tl in SnSe [4], we explored Tl-doping of SnS into cation sublattice. Hot-pressed polycrystalline samples were prepared along with single-crystalline samples by various growing technics. Samples were examined for impurity phases by X-ray diffraction, X-ray fluorescence and Energy-dispersive X-ray for chemical analysis. Thermal stability via Differential scanning calorimetry and thermogravimetry was studied. Transport measurements of Seebeck and Hall coefficient, electrical and thermal conductivity were carried out in temperature range 3-775 K, parameter of thermoelectric efficiency ZT was calculated from obtained data. The experiments suggest very low solubility of Tl (i.e. less than 0.1 %). Higher concentrations of Tl or higher temperatures induce decomposition towards Sn2S3 phase.