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Effect of Tl Doping on Thermoelectric Properties of SnSe Single Crystals

Authors: Šraitrová Kateřina | Kucek Vladimír | Čermák Patrik | Drašar Čestmír

Year: 2018

Type of publication: ostatní - přednáška nebo poster

Page from-to: nestránkováno

Titles:

Language	Name	Abstract	Keywords
eng	Effect of Tl Doping on Thermoelectric Properties of SnSe Single Crystals	SnSe is a very promising material that can be used in many applications - in photovoltaic cells, batteries, supercapacitors, and especially as thermoelectric (TE) material. Based on the excellent TE properties presented in the article of Zhao et al [1], we study this material from thermoelectric point of view. Zhao et al [1] presented exceptional thermoelectric properties of this material, ZT = 2.6 at 923 K and extremely low thermal conductivity in single crystals (ZT = α2σT/κ, where α, σ, T and κ are Seebeck coefficient, electrical conductivity, absolute temperature and thermal conductivity). In our previous paper on polycrystals [2] we discussed Tl as a suitable p-type dopant for SnSe. We decided to further study its effect in single crystals. For this purpose a series of single crystalline samples Sn1-xTlxSe, where x = 0.001, 0.0025, 0.005, 0.0075 and 0.01 was prepared. Phase purity was verified by powder X-ray diffraction. Samples were characterized by measurements of electrical conductivity, Hall coefficient and Seebeck coefficient in the temperature range 93 – 473 K. Tl doping increases the concentration of holes in SnSe markedly – from 4.917 to 6.719 cm-3at room temperature for x = 0.005. Thanks to high values of electrical conductivity Tl significantly improves values of power factor (PF = α2σ) – almost by an order of magnitude at all temperatures.