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Towards Alkylsilyl- and Alkylstanylselenide Precursors for ALD

Authors: Charvot Jaroslav | Bureš Filip | Macák Jan

Year: 2018

Type of publication: ostatní - přednáška nebo poster

Page from-to: nestránkováno

Titles:

Language	Name	Abstract	Keywords
eng	Towards Alkylsilyl- and Alkylstanylselenide Precursors for ALD	ALD is a technology allowing deposition of nanolayers with high uniformity on variable substrates. Elemental selenium can offer interesting properties in many fields like photovoltaics, catalysis or semiconductor electronics. However, there are just few known compounds to date, that could be used as ALD selenium precursor. In 2009, bis(trialkylsilyl)selenides were introduced as breakthrough in selenium precursor chemistry. Moreover, properties of this selenium organometallics can finely be tuned by a proper choice of the appended alkyl groups. Based on this work, we have proposed bis(trialkylstanyl)selenide analogues as new and potentially interesting ALD precursors. The fundamental properties of both series of selenium derivatives will be critically compared employing structural analysis (NMR, MS). The DSC analysis has also been used to determine their thermal behavior as a crucial parameter affecting their perspective deposition.	ALD; selenium; DSC