Publication detail

Transient nucleation in Ge-Sb-S thin films

Authors: Martinková Simona | Shánělová Jana | Barták Jaroslav | Málek Jiří

Year: 2018

Type of publication: ostatní - článek ve sborníku

Name of source: 13th International Conference on Solid State Chemistry : book of abstracts

Publisher name: Univerzita Pardubice

Place: Pardubice

Page from-to: 116-116

Titles:

Language	Name	Abstract	Keywords
eng	Transient nucleation in Ge-Sb-S thin films	The nucleation behavior and kinetics in Ge0.8Sb39.1S60.1 thin films were studied using optical microscope coupled with computer-controlled heating stage. In-situ nucleation experiments were performed in temperature range 236-295°C. The transient nucleation was observed and described by Shneidman equation. The classical nucleation theory was applied on temperature dependence of steady-state nucleation rate.	nucleation; Ge-Sb-S; thin film; CNT

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