University of PardubiceFaculty of Chemical Technology

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Ge-Sb-Te thin films fabricated by co-sputtering

Authors: Bouška Marek | Normani Simone | Nazabal Virginie | Švanda Pavel | Gutwirth Jan | Němec Petr

Year: 2018

Type of publication: ostatní - přednáška nebo poster

Page from-to: nestránkováno

Titles:

Language	Name	Abstract	Keywords
eng	Ge-Sb-Te thin films fabricated by co-sputtering	The aim of this work is to combine co-sputtering as an advanced technique for thin films growth with the fabrication of an important class of inorganic materials being represented by GST thin films. The characterization of deposited thin films in as-deposited state (amorphous phase) as well as in crystalline state (induced by thermal annealing) was performed exploiting atomic force microscopy, scanning electron microscopy with energy-dispersive X-ray analysis, X-ray diffraction, electrical resistivity, and variable angle spectroscopic ellipsometry data. The results are discussed in relation with the chemical composition of the fabricated GST thin films.	Ge-Sb-Te, co-sputtering, chalcogenides, thin films