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Tl-doped SnSe single crystals

Authors: Šraitrová Kateřina | Levinský P | Hejtmánek J | Kucek Vladimír | Drašar Čestmír

Year: 2019

Type of publication: ostatní - přednáška nebo poster

Page from-to: nestránkováno

Titles:

Language	Name	Abstract	Keywords
eng	Tl-doped SnSe single crystals	Tin selenide (SnSe) is a semiconducting material with an extraordinary thermoelectric (TE) performance especially in high temperature range. According to our observations, a stable and effective doping of this compound is still disputable. This is mainly due to the very low equilibrium solubility of dopants and formation of extraneous phases at elevated temperatures. Thus, a shift of optimal TE performance towards low temperatures is advisable. In the present contribution, we report on TE properties of Tl-doped SnSe single crystals. The single crystals were oriented using electron backscatter diffraction (EBSD). Examinations included X-ray diffraction (XRD), energy-dispersive spectroscopy (EDS), measurements of the Seebeck and Hall coefficient, and electrical and thermal conductivity. The experiments suggested rather low solubility of Tl (<0.5 %) however a reasonable doping efficiency. Slight Tl doping (≈0.1 %) resulted in a substantial improvement of TE performance. However, the dopant is distributed non-homogeneously in single crystals prepared by free melt crystalization. This in turn led to some fluctuation of TE properties of doped samples within one batch. Importantly, TE performance of some samples is largely superior to other samples indicating space for further improvements of preparation route. We found room temperature power factor above 4 mWK-1m-2 along crystallographic axes b.	thermoelectricity, SnSe, Tl, single crystals, power factor