Publication detail

Crystal structure and transport properties of CuPdBiS3

Authors: Laufek F. | Vymazalová A. | Navrátil Jiří | Chareev D. A. | Plasil J.

Year: 2019

Type of publication: článek v odborném periodiku

Name of source: Journal of Alloys and Compounds

Publisher name: Elsevier Science SA

Place: Lausanne

Page from-to: 983-987

Titles:

Language	Name	Abstract	Keywords
cze	Crystal structure and transport properties of CuPdBiS3	Paper deals with crystal structure and transport properties of CuPdBiS3.
eng	Crystal structure and transport properties of CuPdBiS3	The CuPdBiS3 compound was synthetized from individual elements by solid-state chemical reactions and structurally characterized by single-crystal X-ray diffraction. It crystalizes in the (Bi, Sb)CuNiS3 structure-type with the P2(1)2(1)2(1) space group, unit-cell parameters a = 4.8847(8), b = 7.5885(11), c = 12.8646(10), V = 476.86(11) and Z = 4. The structure of CuPdBiS3 compound forms a three-dimensional framework composed of corner-sharing [CuS4] deformed tetrahedra and [PdS4] squares. The Bi atoms form [BiS4] pyramids and fill the channels running along the a-axis. There are no short Pd-Pd, Cu-Pd or Cu-Cu interactions (< 3.4 angstrom). Arrhenius behaviour of the electrical conductivity was observed. Considering high free carrier concertation and very low Hall mobility, charge transport is very likely realized via thermally-activated hopping processes. Despite high values of the Seebeck coefficient and rather low thermal conductivity values, the thermoelectric figure-of-merit reaches its maximal value ZT = 0.023 at 675 K only. (C) 2019 Elsevier B.V. All rights reserved.	CuPdBiS3; Crystal structure; X-ray diffraction; Transport properties

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