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Novel selenium ALD precursor

Authors: Charvot Jaroslav | Pokorný Daniel | Bureš Filip | Zazpe Raul | Macák Jan

Year: 2020

Type of publication: ostatní - přednáška nebo poster

Page from-to: nestránkováno

Titles:

Language	Name	Abstract	Keywords
eng	Novel selenium ALD precursor	Atomic layer deposition of metal chalcogenides steadily attracts more and more attention. These compounds possess interesting properties that may be utilized in semiconducting materials, photocatalysis, hydrogen evolution etc. Nevertheless, precursor portfolio for selenium deposition is very limited. Highly toxic H2Se or insufficiently reactive Et2Se (Et2Se2) were later replaced with bis(trialkylsilyl)selenides, which proved to be sufficiently volatile, thermally stable and versatile precursor for metal selenide thin layers fabrication. This work presents cyclic silylselenides bearing one or two atoms of selenium as new ALD precursors. They possess volatility and thermal stability similar to previous bis(trialkylsilyl)selenides, however rigid nature of these cycles render them higher air stability. The syntheses of precursors will be described along with their proper analyses (GC/MS, multinuclear NMR). Thermal behaviour was studied by TGA and DSC. All three target molecules were used as Se precursors in ALD by reacting them with MoCl5 to give corresponding MoSe2 thin layers on different substrates.	ALD; silylselenides; volatility; thermal stability