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Organoselenium Precursors for Atomic Layer Deposition
Year: 2021
Type of publication: článek v odborném periodiku
Name of source: ACS Omega
Publisher name: American Chemical Society
Place: Washington
Page from-to: 6554-6558
Titles:
Language Name Abstract Keywords
cze Organoselenové prekurzory pro depozici atomárních vrstev Jsou představeny organoselenové sloučeniny s perspektivními aplikacemi jako selenové prekurzory pro depozice atomárních vrstev. Nabídka dostupných Se prekurzorů byla rozšířena o bis(trialkylsilyl)selenidy, bis(trialkylstannyl)seleniys, cyklické selenidy a tetrakis(N,N-dimethyldithiokarbamate)-selenium. Jsou diskutovány strukturní aspekty, základní vlastnosti, způsoby přípravy a ladění vlastností sloučenin. Organoselenové prekurzory; depozice atomárních vrstev
eng Organoselenium Precursors for Atomic Layer Deposition Organoselenium compounds with perspective application as Se precursors for atomic layer deposition have been reviewed. The originally limited portfolio of available Se precursors such as H2Se and diethyl(di)selenide has recently been extended by bis trialkylsilyl)selenides, bis(trialkylstannyl)selenides, cyclic selenides, and tetrakis(N,N-dimethyldithiocarbamate)-selenium. Their structural aspects, property tuning, fundamental properties, and preparations are discussed. It turned out that symmetric four- and six-membered cyclic silyl selenides possess well-balanced reactivity/stability, facile and cost-effective synthesis starting from inexpensive and readily available chlorosilanes, improved resistance toward air and moisture, easy handling, sufficient volatility, thermal resistance, and complete gas-to-solid phase exchange reaction with MoCl5, affording MoSe2 nanostructures. These properties make them the most promising Se precursor developed for atomic layer deposition so far. Organoselenium; Precursors for Atomic Layer Deposition

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