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DIRECT LASER WRITING ON THE SURFACE OF PbO-Bi2O3-Ga2O3 GLASSES
Year: 2021
Type of publication: ostatní - článek ve sborníku
Name of source: ICCT2021 : book of abstracts
Publisher name: AMCA, spol. s r.o.
Place: Praha
Page from-to: nestránkováno
Titles:
Language Name Abstract Keywords
eng DIRECT LASER WRITING ON THE SURFACE OF PbO-Bi2O3-Ga2O3 GLASSES Direct laser writing can be used for modification and structuring of the materials surfaces. In glasses, this technique enables to create microlenses or craters with a potential application in optics [1]. The presence of heavy metal oxides in glasses provides suitable properties for optical applications (i.e. high linear and non-linear refractive index, high transmittance in IR region) [2]. This work deals with the role of Bi2O3 on microlenses and craters formation on the surface of (PbO)0.75-x(Bi2O3)x(Ga2O3)0.25 (x = 0-0.30) bulk glasses. The prepared glasses with surface polished to the optical quality were illuminated using a focused continuous-wave laser emitting at 447 nm (diameter of beam ≈ 190 µm, maximal intensity = 430 mW). At shorter exposition times (0.1-5 s) the illuminated part of glass expanded forming microlenses. Longer exposition time (60 s) led to the formation of the craters due to the higher overheating of the illuminated area which caused the removal of the overheated material. In the case of microlenses, the low addition of Bi2O3 into the binary (PbO)0.75(Ga2O3)0.25 glassy matrix caused a significant decrease of threshold power density (Fth,lens ≈ 1000 vs. 510 W/cm2 for x = 0 and 0.03 within 0.1 s exposition). Subsequently Fth,lens decreased slightly with increasing Bi2O3 content. Furthermore, the slope of the dependence of microlenses height on the logarithm power density (i.e. effective penetration depth) decreased with increasing exposition times for x = 0.08-0.23 and had the opposite trend comparing to that in binary PbO-Ga2O3 glasses (see [1]). The Raman and XRD measurements showed that the partial crystallization of created microlenses occurred at used longer exposition times (i.e. 0.5 and/or 5 s). The maximal depth of prepared craters was 80 µm. The threshold power density was not significantly affected by Bi2O3 content (Fth,crater = 540 W/cm2 for x = 0 and 0.15).

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