Publication detail

Sb2Se3 Thin-Film Growth by Solution Atomic Layer Deposition

Year: 2022

Type of publication: článek v odborném periodiku

Name of source: Chemistry of Materials

Publisher name: American Chemical Society

Place: Washington

Page from-to: 9392–9401

Titles:

Language	Name	Abstract	Keywords
cze	Růst tenkých vrstev Sb2Se3 depozicí atomárních vrstev v roztoku	Je popsán řízený růst čistých tenkých vrstev Sb2Se3 za mírných podmínek, tj. při laboratorní teplotě a atmosférickém tlaku, metodou depozice atomárních vrstev v roztoku (sALD). Procesu poskytuje vysoce homogenní tenké filmy Sb2Se3 na velkoplošných (4'') substrátech. Použité rozpouštědlo v sALD se jeví jako účinný nástroj pro ovlivnění a přizpůsobení reaktivity na rozhraní kapalina-pevná látka mezi prekurzory a povrchem.	ALD; povrch; fotovoltaika; tenký film
eng	Sb2Se3 Thin-Film Growth by Solution Atomic Layer Deposition	We establish solution atomic layer deposition (sALD) for the controlled growth of pure Sb2Se3 thin films under mild conditions, namely, room temperature and atmospheric pressure. Upscaling this process yields Sb2Se3 thin films with high homogeneity over large-area (4 '') substrates. Annealing of the initially amorphous material leads to highly crystalline and smooth Sb2Se3 thin films. Removing the constraints of thermal stability and sufficient volatility in sALD compared to traditional gas-phase ALD opens up a broad choice of precursors and allows us to examine a wide range of Se2- precursors, of which some exhibit facile synthetic routes and allow us to tune their reactivity for optimal experimental ease of use. Moreover, we demonstrate that the solvent used in sALD represents an additional, attractive tool to influence and tailor the reactivity at the liquid-solid interface between the precursors and the surface.	absorber; photovoltaics

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