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Co-sputtered Ga–Sb–Te thin films: phase change material characterization

Authors: Kotrla Magdaléna | Přikryl Jan | Janíček Petr | Gutwirth Jan | Halenkovič Tomáš | Cheviré F. | Nazabal Virginie | Němec Petr

Year: 2022

Type of publication: ostatní - přednáška nebo poster

Page from-to: nestránkováno

Titles:

Language	Name	Abstract	Keywords
eng	Co-sputtered Ga–Sb–Te thin films: phase change material characterization	The investigation and application of chalcogenides in the field of phase change materials (PCM) for data storage have been focused mainly on Ge-Sb-Te and Ag-In-Sb-Te systems. The present work studies Ga-Sb-Te system as a potential medium for PCM. The radio-frequency magnetron co-sputtered thin films from two pseudo-binary tie-lines, i.e., GaSb–GaTe (keeping content of Ga at 50 of at. % and changing the ratio between Sb and Te) and GaSb–Te (increasing the content of Te) are studied and characterized.