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Volatile Organic Selenides and Tellurides for ALD Technique

Authors: Pokorný Daniel | Charvot Jaroslav | Klikar Milan | Bureš Filip

Year: 2024

Type of publication: ostatní - přednáška nebo poster

Page from-to: nestránkováno

Titles:

Language	Name	Abstract	Keywords
eng	Volatile Organic Selenides and Tellurides for ALD Technique	Thin films of metal chalcogenides have recently attracted much attention in material chemistry research and development. These layers offer unique properties with great application potential in electronic devices, catalysis, and new-generation thin solar cells. Atomic Layer Deposition (ALD) is a thin film deposition method, which allows the manufacturing of nanolayers associated with perfect uniformity on flat or heterostructured surfaces and the ALD mechanism ensures precise control over the obtained thickness to Angstrom level. A recently developed solution-ALD form transfers the whole deposition process from a strict vacuum to the liquid phase and facilitates further simplification of this method. ALD precursor – the chemical compound containing the atom to be deposited plays a key role in a successful process. The selection portfolio of Se and Te precursors for ALD is very restricted, therefore this work aims to explore new possibilities. Cyclic silyl-chalcogenides with two Se or Te atoms retain the desired parameters of an ALD precursor such as thermal stability, volatility, and reactivity, however, show also lower air-sensitivity, compared to commonly used bis(trialkylsilyl)chalcogenides. Cyclic silyl derivatives 1–4 were prepared in a forthright synthesis from Li2Se and the corresponding dichlorosilanes in satisfying yields. In addition, precursor 1 was prepared via a new method from available and low-cost selenium. The thermal behaviour is studied by TG and DSC analyses. The prepared compounds were successfully applied for Sb2Se3, MoSe2 and MoTe2 thin film deposition.	Atomic Layer Deposition; Cyclic Precursors; Organoselenides; Organotellurides, Synthesis