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Predictive tool for determination of co-sputtering process parameters towards required chemical composition of thin films

Authors: Gutwirth Jan | Halenkovič Tomáš | Kotrla Magdaléna | Viswanathan Anupama | Nazabal Virginie | Němec Petr

Year: 2024

Type of publication: ostatní - přednáška nebo poster

Page from-to: nestránkováno

Titles:

Language	Name	Abstract	Keywords
eng	Predictive tool for determination of co-sputtering process parameters towards required chemical composition of thin films	Current development of new materials is partially focused to trace influence of composition onto studied functional properties of the materials. In the case of thin films, a multisource deposition is one of beneficial techniques for preparation of sample series varying in composition. Recently, simplified calculation model required only basic physicochemical constants (i.e. molar masses and densities) of studied materials together with reduced number of trial depositions covering basic instrument characteristics (tool-constants) was developed [1]. The above mentioned calculation model is developed, adopted and experimentally verified for a two-source depositions of amorphous chalcogenides (i.e. sulfides, selenides and tellurides). These thin films are deposited by radiofrequency (RF) magnetron sputtering. Within the aim of the presented work the prepared thin films are characterized namely by means of Energy Dispersive X-Ray Analysis coupled with Scanning Electron Microscope (SEM-EDX) to determine the chemical composition and by Variable Angle Spectroscopic Ellipsometry (VASE) and profilometry to establish film thickness. Presented model is suitable for preparation of co-sputtered thin films in wide compositional range. In terms of composition, the accuracy of presented model is similar to compositional deviations observed for single source depositions of binary compositions and close to SEM-EDX technique accuracy, which practically means up to ~ 3 %at, typically up to ~ 2 %at. For the thickness, the accuracy of the model is mostly dependent on availability of co-sputtering thin film density data and thus vary up to ~ 20 %, typically up to 10 %.	PVD; Thin film; Co-Sputtering; Composition; Thin film growth model