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General review of polycrystalline Bi2O2Se preparation

Authors: Zich Jan | Sojka Antonín | Navrátil Jiří | Plecháček Tomáš | Ruleová Pavlína | Drašar Čestmír

Year: 2024

Type of publication: ostatní - přednáška nebo poster

Page from-to: nestránkováno

Titles:

Language	Name	Abstract	Keywords
eng	General review of polycrystalline Bi2O2Se preparation	For over a decade, bismuth oxyselenide (Bi2O2Se) has been studied as a promising thermoelectric (TE) material, but also for multiple applications beyond thermoelectrics, such as infrared photodetectors and substrates for two-dimensional field-effect transistors (2D FETs). Its main advantage as a TE material is the combination of good transport proper-ties, notably high carrier mobility, absence of toxic elements and reasonable price. As the pure material has low electrical conductivity, researchers focus on doping . In this context, it is crucial to distinguish the effect of doping from a simple variation of the base material. It is noteworthy that even for the same synthesis method, the reported transport prop-erties of bulk polycrystalline samples are very different [2,3,4]. To understand the factors contributing to the variation in transport properties, we analyzed literature data and prepared samples using various compounds and synthesis routes. In order to identify foreign phases in the prepared samples, we carried out an analysis using powder X-ray diffraction (PXRD), scanning electron microscopy/energy dispersive X-ray spectroscopy (SEM/EDS), Raman spectroscopy and ATR IR spectroscopy. Transport properties have been measured with focus on electrical conductivity. In this work we present how impurities can affect the transport properties of undoped material and we aim to establish a reproducible low-temperature solid-state synthesis pro-cess for pure Bi2O2Se. This work supplements the findings presented in the oral presentation titled y“Revision of the Preparation Method and Properties of Polycrystalline Bi2O2Se”.