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Phosphorus Precursors for ALD of Metal Phosphides

Authors: Charvot Jaroslav | Zazpe Raul | Rodriguez Pereira Jhonatan | Váňa Jiří | Macák Jan | Bureš Filip

Year: 2025

Type of publication: ostatní - přednáška nebo poster

Page from-to: nestránkováno

Titles:

Language	Name	Abstract	Keywords
eng	Phosphorus Precursors for ALD of Metal Phosphides	Thin films of metal and other phosphides are gaining significant attention in material sciences; however, the development of ALD processes for these materials remains limited. One of the primary challenges hindering further research and application of metal phosphides is the lack of suitable phosphorus precursors for their deposition. The most commonly employed precursor is phosphine (PH3), used for depositing CoP and GaP. However, PH3 is difficult to handle, requires strict safety precautions, and is relatively unreactive, often necessitating activation by plasma. Other precursors, such as tertbutylphosphine (tBuPH2) and tris(dimethylamino)phosphine (P(NMe2)3), have been utilized for the deposition of InP and GaP. Nevertheless, these reactions typically require high temperatures exceeding 320 °C to promote the reaction. More recently, tris(trimethylsilyl)phosphide (TMS3P) has shown promise as a precursor for depositing Co2P thin films. While TMS3P has demonstrated value as an ALD precursor, its reactivity with other metal precursors remains unexplored. Building on prior research, this work investigates the chemistry of phosphides and evaluates potential phosphorus precursors. TMS3P and related compounds are synthesized, and their thermal behavior is analyzed using Differential Scanning Calorimetry (DSC) and Thermogravimetric (TG) analysis. The scalability of the preparation process is critically reviewed. Finally, selected candidates are employed in ALD processes with various counter-precursors to reveal their chemical behavior and evaluate their applicability as ALD precursors.	ALD; phosphide; cobalt; gaallium; indium