Publication detail

Optical characterization of phase changing Ge2Sb2Te5 chalcogenide films

Year: 2008

Type of publication: článek v odborném periodiku

Name of source: Physica Status Solidi C: Current Topics in Solid State Physics

Publisher name: Wiley-VCH

Place: Weinheim

Page from-to: 1324-1327

Titles:

Language	Name	Abstract	Keywords
cze	Optická charakterizace Ge2Sb2Te5 (GST) chalkogenidových filmů	K optické charakterizaci deponovaných a temperovaných Ge2Sb2Te5 (GST) filmů bylo použito VASE a spektroskopické reflektometrie. Disperzní model GST filmů byl založen na parametrizaci hustoty elektronových stavů. Redistribuci elektronů lze vysvětlit fázovou změnou GST filmů z amorfní struktury na polykrystalickou.	ulíkové filmy;tenké filmy;tepelná stabilita
eng	Optical characterization of phase changing Ge2Sb2Te5 chalcogenide films	The variable angle spectroscopic ellipsometry and spectroscopic reflectometry is used for the optical characterization of the as deposited and annealed Ge2Sb2Te5 (GST) films. The dispersion model of the GST films is based on the parameterization of the density of electronic states. As a consequence of annealing, roughness of the upper boundaries of the GST films originates. This annealing also causes the evident redistribution of the density of electronic states from the higher energies to lower energies. The roughening and redistribution of the electrons are explained by means of the phase change of the GST films from amorphous to polycrystalline structure. This phase change is accompanied by changing the conductivity of the films that was proved by introducing the terms of the free carriers in the dispersion model of the GST films.	Carbon-films;Thin-films;Thermal-stability;Dispersion model; Rough surfaces;Constants; SIOX

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