Publikace detail

Low-temperature ferromagnetic properties of the diluted magnetic semiconductor Sb(2-x)Cr(x)Te(3)

Autoři: Dyck Jeffrey S | Drašar Čestmír | Lošťák Petr | Uher Ctirad

Rok: 2005

Druh publikace: článek v odborném periodiku

Název zdroje: Physical Review B

Název nakladatele: American Physical Society

Místo vydání: College Park

Strana od-do: 115214(1-6)

Tituly:

Jazyk	Název	Abstrakt	Klíčová slova
cze	Low-temperature ferromagnetic properties of the diluted magnetic semiconductor Sb(2-x)Cr(x)Te(3)	We report on magnetic and electrical transport properties of Sb2-xCrxTe3 single crystals over temperatures from 2 K to 300 K. A ferromagnetic state develops in these crystals at low temperatures with Curie temperatures that are proportional to x (for x > 0.014), attaining a maximum value of 20 K for x = 0.095. Hysteresis below TC for applied field parallel to the c-axis is observed in both magnetization and Hall effect measurements. Magnetic as well as transport data indicate that Cr takes the 3+ (3d3) valence state, substituting for antimony in the host lattice structure, and does not significantly affect the background hole concentration. These results broaden the scope of ferromagnetism in the V2-VI3 diluted magnetic semiconductors (DMS) and in ferromagnetic DMS structures generally.
eng	Low-temperature ferromagnetic properties of the diluted magnetic semiconductor Sb(2-x)Cr(x)Te(3)	We report on magnetic and electrical transport properties of Sb2-xCrxTe3 single crystals over temperatures from 2 K to 300 K. A ferromagnetic state develops in these crystals at low temperatures with Curie temperatures that are proportional to x (for x > 0.014), attaining a maximum value of 20 K for x = 0.095. Hysteresis below TC for applied field parallel to the c-axis is observed in both magnetization and Hall effect measurements. Magnetic as well as transport data indicate that Cr takes the 3+ (3d3) valence state, substituting for antimony in the host lattice structure, and does not significantly affect the background hole concentration. These results broaden the scope of ferromagnetism in the V2-VI3 diluted magnetic semiconductors (DMS) and in ferromagnetic DMS structures generally.	diluted magnetic semiconductor, magnetic and electrical transport

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