Publikace detail

N-type to p-type crossover in quaternary BixSbyPbzSe3 single crystals

Rok: 2005

Druh publikace: článek v odborném periodiku

Název zdroje: Journal of Applied Physics

Název nakladatele: American Institute of Physics

Místo vydání: Melville

Strana od-do: 103720/1-103720/5

Tituly:

Jazyk	Název	Abstrakt	Klíčová slova
cze	Změna typu elektrické vodivosti v kvaternárních monokrystalech BixSbyPbzSe3	Práce popisuje způsob přípravy p-typového monokrystalického Bi2Se3 s použitím dvojitého dopování antimonem a olovem.
eng	N-type to p-type crossover in quaternary BixSbyPbzSe3 single crystals	We report on the preparation and some physical properties of a new type quaternary system based on Bi2Se3 co-doped with Sb and Pb. Single crystal samples were prepared using the Bridgman technique and were characterized by measurements of the lattice parameters, electrical resistivity, Hall coefficient, Seebeck coefficient and thermal conductivity. Atomic emission spectroscopy was used to find the concentration profiles of Sb and Pb along the single-crystalline ingots. Progressive co-doping of the Bi2Se3 crystal lattice with Sb and Pb leads to a crossover of the initially n-type conduction to that of the p-type. It is assumed that both Sb and Pb enter the Bi-sublattice. Physical properties as well as the change in the dominant carrier type are discussed in the context of the concentration of various point defects. A new complex defect is introduced to account for some features of the data.	Crystals of tetradymite structure, Quaternary crystals, Transport coefficients, Point defects

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