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Vlastnosti nových zředěných magnetických polovodičů Sb2-xVxTe3

Autoři: Lošťák Petr | Drašar Čestmír | Zhou Z. | Uher C.

Rok: 2005

Druh publikace: článek ve sborníku

Název zdroje: ChemZi

Název nakladatele: Slovenská chemická spoločnosť pri SAV

Místo vydání: Bratislava

Strana od-do: 84

Tituly:

Jazyk	Název	Abstrakt	Klíčová slova
cze	Vlastnosti nových zředěných magnetických polovodičů Sb2-xVxTe3	The single crystals of Sb2-xVxTe3 (x=0.0, 0.01, 0.02, 0.03) were grown by a modified Bridgman method from elements of 5N purity. The samples were characterized by measurements of the temperature dependence of the electrical resistivity, Hall coefficient, Seebeck coefficient, thermal conductivity and magnetic susceptibility in the temperature range of 2-300 K. Magnetization curves were measured too. It was found that the vanadium-doping in the Sb2Te3 crystals does not change the concentration of holes. A small content of vanadium in the Sb2Te3 crystal lattice gives rise to ferromagnetic behavior at low temperatures; the Curie temperature TC increases with vanadium content and reaches approximately 22 K for Sb1.97V0.03Te3. The incorporation of V atoms into the Sb2Te3 crystal results in the suppression of the values of thermal conductivity. Substracting the electronic component of thermal conductivity we obtain the lattice thermal conductivity. At low temperatures it has an approximate T2 dependence and the data up to 100 K can be fitted well assuming that phonons scatter on boundaries, point defects, charge carriers, and other phonons.
eng	Some properties of the novel diluted magnetic semiconductors Sb2-xVxTe3	The single crystals of Sb2-xVxTe3 (x=0.0, 0.01, 0.02, 0.03) were grown by a modified Bridgman method from elements of 5N purity. The samples were characterized by measurements of the temperature dependence of the electrical resistivity, Hall coefficient, Seebeck coefficient, thermal conductivity and magnetic susceptibility in the temperature range of 2-300 K. Magnetization curves were measured too. It was found that the vanadium-doping in the Sb2Te3 crystals does not change the concentration of holes. A small content of vanadium in the Sb2Te3 crystal lattice gives rise to ferromagnetic behavior at low temperatures; the Curie temperature TC increases with vanadium content and reaches approximately 22 K for Sb1.97V0.03Te3. The incorporation of V atoms into the Sb2Te3 crystal results in the suppression of the values of thermal conductivity. Substracting the electronic component of thermal conductivity we obtain the lattice thermal conductivity. At low temperatures, it has an approximate T2 dependence and the data up to 100 K can be fitted well assuming that phonons scatter on boundaries, point defects, charge carriers, and other phonons.	diluted magnetic semiconductors, magnetic susceptibility, transport coefficients

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