Publikace detail

Thermoelectric Properties of Bi2AsXSe3-X single crystals

Rok: 2005

Druh publikace: článek ve sborníku

Název zdroje: Proceedings of the 3rd Conference on Thermoelectrics

Název nakladatele: Ecole Nationale Superieure des Mines de Nancy

Místo vydání: Nancy

Strana od-do: 131-133

Tituly:

Jazyk	Název	Abstrakt	Klíčová slova
cze	Termoelektrické vlastnosti monokrystalů Bi2AsxSe3-x	Práce podává prvotní informace o termoelektrických vlastnostech monokrystalů Bi2AsxSe3-x.
eng	Thermoelectric Properties of Bi2AsXSe3-X single crystals	Bi2Se3-xAsx single crystals were prepared from the elements Bi, As, and Se of 5N purity by a modified Bridgman method. The obtained crystals were characterized by measurements of the temperature dependence of the electrical resistivity , Hall coefficient , Seebeck coefficient and thermal conductivity in the temperature range of 5-300 K. It was observed that with an increasing As content in the samples the Hall coefficient and the Seebeck coefficient increase, while electrical resistivity is kept nearly unchanged. This means that the incorporation of As atoms into the Bi2Se3 crystal structure results in a decrease in the concentration of free electrons and increase of their mobility in the doped crystals. For the explanation of this observed effect a model of defects in the crystals is proposed. In accordance with the observed increasing mobility, the figure of merit Z of the Bi2Se3-xAsx crystals increases with increasing values of x.	thermoelectric properties;Bi2AsxSe3-x single crystals

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