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Er3+ doped Ge-Ga-Se glasses for short length optical amplifiers

Autoři: Munzar Martin | Koughia C. | Haugen C. | Decorby R. | McMullin J.N. | Kasap S.O.

Druh publikace: ostatní - přednáška nebo poster

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Jazyk	Název	Abstrakt	Klíčová slova
cze	Er dotované Ge-Ga-Se skla pro miniaturní optické zesilovače	Er dotované Ge-Ga-Se skla pro miniaturní optické zesilovače	chalcogenide;photoluminescence;optical properties;
eng	Er3+ doped Ge-Ga-Se glasses for short length optical amplifiers	Optical and thermodynamical properties of Ge-Ga-Se(S) glasses heavily doped with Er3+ prepared by melt quenching technique have been investigated as a function of chemical composition and Er concentration. The glasses were doped using Er2S3. A strong correlation between the Er3+ and Ga concentrations (CEr and CGa) and the properties of these glasses has been observed. High CGa/CEr > 10 ensures the homogeneous distribution of Er3+ in the host volume. The optimum Ga concentration was found to be 10-12 at.% while higher CGa destroyed the glass structure. Up to 1.5 at.% of Er may be dissolved homogeneously without the formation of clusters and precipitates. The best results have been observed in glasses with stoichiometric compositions with subsequent annealing. We have studied the photoluminescence (PL) of a wide range of heavily Er3+ doped chalcogenide glasses pumped by laser diodes operating at various wavelengths from 530 up to 980 nm and showed that the broadening of PL line at higher excitation wavelengths may be connected with the absorption ? reemission of emitted photons. We were able to prepare the homogeneous thin films of desirable composition by pulse laser deposition of bulk glasses. We compare the Pl spectra of Er3+ doped bulk samples and thin films.	chalcogenide;photoluminescence;optical properties;