Publikace detail

DILUTED MAGNETIC SEMICONDUCTORS Sb2-xVxTe3

Autoři: Drašar Čestmír | Lošťák Petr | Zhou Z. | Uher Ctirad

Rok: 2006

Druh publikace: článek ve sborníku

Název zdroje: 21st General Conference of the EPS Condensed Matter Division

Název nakladatele: Deutschen Physikalischen Gesellschaft

Místo vydání: Dresden

Strana od-do: 252

Tituly:

Jazyk	Název	Abstrakt	Klíčová slova
cze	DILUTED MAGNETIC SEMICONDUCTORS Sb2-xVxTe3	Recently, a new type of diluted magnetic semiconductors based on the tetradymite-type structure was described [1,2]. In this contribution, we compare the transport and magnetic properties of Sb2-xVxTe3 in the single crystalline form (x = 0.0-0.03) with the properties of thin films grown by MBE in which the content of vanadium is much higher (x = 0.0-0.35). It was found that the vanadium-doping in single crystals of Sb2Te3 does not change the concentration of holes yet it gives rise to ferromagnetism at low temperatures. The Curie temperature TC increases with the vanadium content and reaches 22 K for a single crystal of Sb1.97V0.03Te3. In the case of thin films of Sb2-xVxTe3, the concentration of holes determined from the Hall effect increases with the increasing concentration of vanadium and the Curie temperature of a film with x = 0.35 reaches at least 177 K, the temperature comparable or higher than that obtained with Mn-doped GaAs.
eng	DILUTED MAGNETIC SEMICONDUCTORS Sb2-xVxTe3	Recently, a new type of diluted magnetic semiconductors based on the tetradymite-type structure was described [1,2]. In this contribution, we compare the transport and magnetic properties of Sb2-xVxTe3 in the single crystalline form (x = 0.0-0.03) with the properties of thin films grown by MBE in which the content of vanadium is much higher (x = 0.0-0.35). It was found that the vanadium-doping in single crystals of Sb2Te3 does not change the concentration of holes yet it gives rise to ferromagnetism at low temperatures. The Curie temperature TC increases with the vanadium content and reaches 22 K for a single crystal of Sb1.97V0.03Te3. In the case of thin films of Sb2-xVxTe3, the concentration of holes determined from the Hall effect increases with the increasing concentration of vanadium and the Curie temperature of a film with x = 0.35 reaches at least 177 K, the temperature comparable or higher than that obtained with Mn-doped GaAs.	DILUTED MAGNETIC SEMICONDUCTORS transport and magnetic properties

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