Publikace detail

Hydrostatic pressure enhancement of the Curie temperature and anomalous Hall effect in Sb2−xCrxTe3

Autoři: Dyck J.S. | Luciana J. | Drašar Čestmír | Lošťák Petr

Rok: 2006

Druh publikace: článek v odborném periodiku

Název zdroje: Bulletin of the American Physical Society

Název nakladatele: American Physical Society

Místo vydání: College Park

Strana od-do: 564-565

Tituly:

Jazyk	Název	Abstrakt	Klíčová slova
cze	Hydrostatic pressure enhancement of the Curie temperature and anomalous Hall effect in Sb2−xCrxTe3	The narrow band gap tetradymite-type semiconductors with the form AV2 BV I 3 (A = Sb, Bi and B = Se, Te) are normally associated with thermoelectric cooling devices. However, Sb2Te3 doped with V or Cr and Bi2Te3 doped with Fe display a ferromagnetic transition at low temperatures. We have investigated electrical transport properties of bulk single crystals of the ferromagnetic diluted magnetic semiconductor Sb2−xCrxTe3 under varying pressure (0 GPa to 1.5 GPa), temperature (2 K to 300 K), and magnetic fields (0 T to 6 T). High pressure measurements afford a reversible way to tune both the electronic structure and magnetic interactions of these materials. The behavior of the Curie temperature TC can be monitored via the position of the peak in the resistance data associated with the ferromagnetic transition. We observe that TC increases with increasing pressure in this compound. The anomalous Hall effect with clear hysteresis is also observed below TC, and trends with pressure will be discussed.
eng	Hydrostatic pressure enhancement of the Curie temperature and anomalous Hall effect in Sb2−xCrxTe3	The narrow band gap tetradymite-type semiconductors with the form AV2 BV I 3 (A = Sb, Bi and B = Se, Te) are normally associated with thermoelectric cooling devices. However, Sb2Te3 doped with V or Cr and Bi2Te3 doped with Fe display a ferromagnetic transition at low temperatures. We have investigated electrical transport properties of bulk single crystals of the ferromagnetic diluted magnetic semiconductor Sb2−xCrxTe3 under varying pressure (0 GPa to 1.5 GPa), temperature (2 K to 300 K), and magnetic fields (0 T to 6 T). High pressure measurements afford a reversible way to tune both the electronic structure and magnetic interactions of these materials. The behavior of the Curie temperature TC can be monitored via the position of the peak in the resistance data associated with the ferromagnetic transition. We observe that TC increases with increasing pressure in this compound. The anomalous Hall effect with clear hysteresis is also observed below TC, and trends with pressure will be discussed.	Hydrostatic pressure enhancement Curie temperature anomalous Hall effect

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