Přihlášení pro studenty

Přihlášení pro zaměstnance

Publikace detail

Thermoelectric properties of quaternary BixSbyPbzSe3 single crystals
Autoři: Drašar Čestmír | Kašparová Jana | Lošťák Petr | Kong Huijun | Zhou Zhenhua | Uher Ctirad
Rok: 2006
Druh publikace: článek ve sborníku
Název zdroje: 4th Europe Confer. on Thermoelectrics
Název nakladatele: School of Engineering Cardiff University
Místo vydání: Cardiff
Strana od-do: 90-93
Tituly:
Jazyk Název Abstrakt Klíčová slova
cze Thermoelectric properties of quaternary BixSbyPbzSe3 single crystals Single crystals of quaternary system based on Bi2Se3 co-doped with Sb and Pb were prepared using the Bridgman technique. Samples with varying content of Pb and Sb were characterized by measurements of the lattice parameters, electrical resistivity, Hall coefficient, Seebeck coefficient and thermal conductivity. Atomic emission spectroscopy was used to find the concentration profiles of Sb and Pb along the single-crystalline ingots. The measurements indicate that by incorporating Pb and Sb in Bi2Se3 one lowers the concentration of free electrons and changes the character of electrical conductivity from n-type to p-type. This effect is explained in terms of point defects. Further, the evolution of the figure of merit is presented as a function of the impurity content.
eng Thermoelectric properties of quaternary BixSbyPbzSe3 single crystals Single crystals of quaternary system based on Bi2Se3 co-doped with Sb and Pb were prepared using the Bridgman technique. Samples with varying content of Pb and Sb were characterized by measurements of the lattice parameters, electrical resistivity, Hall coefficient, Seebeck coefficient and thermal conductivity. Atomic emission spectroscopy was used to find the concentration profiles of Sb and Pb along the single-crystalline ingots. The measurements indicate that by incorporating Pb and Sb in Bi2Se3 one lowers the concentration of free electrons and changes the character of electrical conductivity from n-type to p-type. This effect is explained in terms of point defects. Further, the evolution of the figure of merit is presented as a function of the impurity content. Thermoelectric properties lattice parameters single crystalls

Katedry

Ústavy a pracoviště

Jak nás najdete?

zobrazit na mapy.cz

Služby

Často hledáte

© 2023 Univerzita Pardubice, Studentská 95, 532 10 Pardubice 2
Telefon: 466 036 111, 466 036 112, 466 036 113
Správce webu, RSS
ID datové schránky: f5vj9hu
Prohlášení o přístupnosti
CC BY-NC-ND 4.0 CZCreative CommonsAttributionNonCommercialNoDerivatives