Publikace detail

Ion conductive chalcogenide glasses in LiI-Ga2S3-GeS2

Rok: 2011

Druh publikace: článek v odborném periodiku

Název zdroje: Journal of Non-Crystalline Solids

Název nakladatele: Elsevier Science BV

Místo vydání: Amsterdam

Strana od-do: 2223-2227

Tituly:

Jazyk	Název	Abstrakt	Klíčová slova
cze	Iontová vodivost chalkogenidových skel v LiI-Ga2S3-GeS2	Byly studovány elektrické vlastnosti LiI obsahující chalkohalidová skla v systému Ga(2)S(3)-GeS(2)pomocí potenciostatické chronoamperometrie.	chalkohalidová skla;iontová vodivost;potenciostatická chronoamperometrie
eng	Ion conductive chalcogenide glasses in LiI-Ga2S3-GeS2	The electric properties of LiI containing chalcohalide glasses in the system Ga(2)S(3)-GeS(2) were studied by means of impedance spectroscopy and potentiostatic chronoamperometry. Two sets of the samples were prepared by direct synthesis from elements and compounds in evacuated quartz ampoules. The prepared glasses were as follows: xLiI-xGa(2)S(3)-(100-2x)GeS(2), x = 15, 20, 25 and 20LiI-xGa(2)S(3)-(80-x)GeS(2), x = 0, 5, 10, 15 and 20. In the first set the concentration of LiI increased and the second set was prepared to study the influence of Ga(2)S(3) on the properties of the glasses. Additional aim of this work was to compare the electric properties of LiI containing Ga(2)S(3)-GeS(2) glasses with analogous Agl containing Ga(2)S(3)-GeS(2) glasses recently studied by us. The conductivity of the LiI containing glasses in the Ga(2)S(3)-GeS(2) system was higher and the activation energy was lower than in the analogous Agl containing system. The residual electronic (hole) conductivity remained similar in both systems being almost negligibly low. Raman spectroscopy proved the influence of LiI as well as Ga(2)S(3) on glass structure, however interpretation of Raman spectra of these glasses is complicated due to small mass difference between gallium and germanium	Chalcohalide glasses;Ionic conductivity;Impedance spectroscopy;Potentiostatic chronoamperometry

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