Publikace detail

Optical and electrical properties of Sb-rich Sb-Se system thin films for phase change memories

Autoři: Hromádko Luděk | Přikryl Jan | Orava Jiří | Košťál Petr | Frumar Miloslav

Rok: 2012

Druh publikace: ostatní do riv

Strana od-do: nestránkováno

Tituly:

Jazyk	Název	Abstrakt	Klíčová slova
cze	Optical and electrical properties of Sb-rich Sb-Se system thin films for phase change memories	Materials for phase change memories with better parameters than those, which are already commercially used have been intensively searched. The Sb-rich Sb-Se materials studied in this paper are potential candidates for such a purpose. The bulk samples of composition Sb90Se10, Sb85Se15 and Sb80Se20 were crystalline and consist of Sb and Sb2Se3 phases. The thin films were prepared from bulk powdered samples by flash evaporation. As-deposited films were amorphous. The optical bandgaps of amorphous films were from the range 0.28 to 0.35 eV. The optical bandgaps increased with increasing content of selenium. Values of refractive index were in range 5.37 to 5.75 ( = 1500 nm) for amorphous state and 6.11 to 6.74 for crystalline state. They increased with increasing content of antimony. The values of sheet electrical resistance of as-deposited thin films were about 106 Ω/sqr. and 102 Ω/sqr. for crystalline films. The crystallization temperature was found in the range 160 170°C and it increased with increasing content of selenium. Activation energies of electrical conductivity of as-deposited films were in range 0.27 0.29 eV and they increased with increasing content of selenium. Large changes of optical reflectivity and electrical resistance due to crystallization showed that these materials can be potentially applied as active parts for data storage cells. The authors thank to grant projects CZ.1.07/2.3.00/09.0104 “Education and Development of Research Team for Centre of Material Science Pardubice” and CZ.1.07/2.3.00/20/0254 “ReAdMat – Research Team for Advanced Non-Crystalline Materials”realized by ESF and Ministry of Education, Youth and Sports of The Czech Republic within ECOP.	optické vlastnosti; elektrické vlastnosti; Sb-Se
eng	Optical and electrical properties of Sb-rich Sb-Se system thin films for phase change memories	Materials for phase change memories with better parameters than those, which are already commercially used have been intensively searched. The Sb-rich Sb-Se materials studied in this paper are potential candidates for such a purpose. The bulk samples of composition Sb90Se10, Sb85Se15 and Sb80Se20 were crystalline and consist of Sb and Sb2Se3 phases. The thin films were prepared from bulk powdered samples by flash evaporation. As-deposited films were amorphous. The optical bandgaps of amorphous films were from the range 0.28 to 0.35 eV. The optical bandgaps increased with increasing content of selenium. Values of refractive index were in range 5.37 to 5.75 ( = 1500 nm) for amorphous state and 6.11 to 6.74 for crystalline state. They increased with increasing content of antimony. The values of sheet electrical resistance of as-deposited thin films were about 106 Ω/sqr. and 102 Ω/sqr. for crystalline films. The crystallization temperature was found in the range 160 170°C and it increased with increasing content of selenium. Activation energies of electrical conductivity of as-deposited films were in range 0.27 0.29 eV and they increased with increasing content of selenium. Large changes of optical reflectivity and electrical resistance due to crystallization showed that these materials can be potentially applied as active parts for data storage cells. The authors thank to grant projects CZ.1.07/2.3.00/09.0104 “Education and Development of Research Team for Centre of Material Science Pardubice” and CZ.1.07/2.3.00/20/0254 “ReAdMat – Research Team for Advanced Non-Crystalline Materials”realized by ESF and Ministry of Education, Youth and Sports of The Czech Republic within ECOP.	Sb-rich Sb-Se system; Phase change memories; thin films

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