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Publikace detail

Phase change memory materials, bad glass formers with nanosecond crystallization times
Rok: 2012
Druh publikace: ostatní do riv
Strana od-do: nestránkováno
Tituly:
Jazyk Název Abstrakt Klíčová slova
cze Phase change memory materials, bad glass formers with nanosecond crystallization times A review of materials used in non-volatile memory cells, in Blue-ray and DVD disks, their structure, stoichiometry, doping, crystallization and amorphization is given. The results are based on many years' research activities of University of Pardubice group and they are compared with other authors' results. The materials are mostly narrow gap semiconductors in amorphous state and degenerated semiconductors in crystalline form. The phase change are produced by intensive laser or electrical pulses. The compounds formed by crystallization are similar to metallic alloys their composition and properties can be changed in broad ranges without abrupt changes of structure and properties. Very often, different structure of slowly crystallized and formed metastable phases, crystallized by nanosecond lase pulses, can be obtained. fázová změna; paměť; materiály
eng Phase change memory materials, bad glass formers with nanosecond crystallization times A review of materials used in non-volatile memory cells, in Blue-ray and DVD disks, their structure, stoichiometry, doping, crystallization and amorphization is given. The results are based on many years' research activities of University of Pardubice group and they are compared with other authors' results. The materials are mostly narrow gap semiconductors in amorphous state and degenerated semiconductors in crystalline form. The phase change are produced by intensive laser or electrical pulses. The compounds formed by crystallization are similar to metallic alloys their composition and properties can be changed in broad ranges without abrupt changes of structure and properties. Very often, different structure of slowly crystallized and formed metastable phases, crystallized by nanosecond lase pulses, can be obtained. Phase change; memory; materials

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