Publikace detail

Infrared spectroscopy of Cr- and V-doped Sb2Te3: Dilute magnetic semiconductors

Autoři: Manson J | Madubuonu A | Crandles D.A | Uher C | Lošťák Petr

Rok: 2014

Druh publikace: článek v odborném periodiku

Název zdroje: Physical Review B

Název nakladatele: American Physical Society

Místo vydání: College Park

Strana od-do: "205205-1"-"205205-7"

Tituly:

Jazyk	Název	Abstrakt	Klíčová slova
cze	Infračervená spektroskopie Cr- a V-dopovaného Sb2Te3: Zředěných magnetických polovodičů	Je předložena interpretace teplotních závislostí reflektivity v oblasti rezonanční frekvence plasmatu krystalů Sb2Te3 s příměsí atomu Cr a V.	feromagnetické polovodiče;optické vlastnosti;monokrystaly;transport;odolnost;kov
eng	Infrared spectroscopy of Cr- and V-doped Sb2Te3: Dilute magnetic semiconductors	Temperature dependent optical reflectance measurements on well characterized samples of nonintentionally doped, Cr-doped, and V-doped Sb2Te3 show that both the parent compound and the Cr-doped version are narrow-gap semiconductors (E-g approximate to 0.25 eV) with a conventional Drude free carrier absorption. The carrier density increases slightly with decreasing temperature while the scattering rate increases quadratically with temperature, which is a sign of the importance of optical phonon scattering. Vanadium doping introduces a change in the temperature dependence of the scattering rate as well as higher electrical resistivity than Cr-doped Sb2Te3. An analysis of the literature values of the saturation magnetization of Sb2-xVxTe3 for H parallel to c suggests V is in a mixed valence state V3+/V4+.	FERROMAGNETIC SEMICONDUCTORS; OPTICAL-PROPERTIES; SINGLE-CRYSTALS; TRANSPORT; SRRUO3; RESISTIVITY; TRANSITION; BI2TE3; METAL

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