Univerzita PardubiceFakulta chemicko- technologická

Univerzita Pardubice

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Publikace detail

Ga-Ge-Sb-S: Er3+ Amorphous Chalcogenides: Photoluminescence and Photon Up-conversion

Autoři: Střižík Lukáš | Zhang Jihong | Wágner Tomáš | Oswald Jiří | Pavlišta Martin | Kohoutek Tomáš | Frumarová Božena | Frumar Miloslav | Heo Jong

Rok: 2014

Druh publikace: ostatní - přednáška nebo poster

Strana od-do: nestránkováno

Tituly:

Jazyk	Název	Abstrakt	Klíčová slova
eng	Ga-Ge-Sb-S: Er3+ Amorphous Chalcogenides: Photoluminescence and Photon Up-conversion	We report on compositional tuning in Ge25Ga10 xSbxS65: 0.5 at.% Er3+ (x = 0.5, 2.5 or 5.0) chalcogenide glassy phosphors allowing for effective green 2H11/2,4S3/2→4I15/2 (530, 550 nm), red 4F9/2→4I15/2 (660 nm) and near infrared 4I9/2, 4I11/2→4I15/2 (810, 990 nm) photon up conversion emission originating from Er3+ intra 4f electronic transitions applicable such as in lasers [1] or layers for silicon solar cell efficiency improvement [2]. Moreover, we present also near 4I13/2→4I15/2 (1.54 μm) and mid infrared 4I11/2→4I13/2 (2.7 μm) Stokes emissions under near infrared laser pumping. We firstly show mid infrared 2.7 μm emission originating not just from Stokes processes under 808 nm, 980 nm pumping but also from anti Stokes processes allowing the eye safe 1.55 μm pumping in telecommunication C band which make these phosphors capable in sensing, LIDAR technology, optical amplifiers, or surgery lasers. Above that, studied host glasses exhibit good glass forming ability, thermal stability, high rare earth solubility, resistance to moisture and they can be shaped into e.g. optical fibers or easily deposited to form thin films. The influence of Ga substitution with Sb on the structure and optical properties were investigated. Judd Ofelt analysis was evaluated for study of the changing in local environment of Er3+ ions and for determination of phenomenological parameters Ω2, Ω4, Ω6, branching ratios β, spontaneous electric/magnetic dipole emission probabilities AED, AMD, linestrengths S and lifetimes τexp of Er3+ 4f 4f transitions which were compared to experimentally measured data with good agreement.	Ga-Ge-Sb-S; Er3+; Amorphous chalcogenides; Photoluminescence; Photon up-conversion