Publikace detail

Stages in resistive switching of memory cells based on chalcogenides and nanoporous AAO

Autoři: Zhang Bo | Kolář Jakub | Macák Jan | Wágner Tomáš

Rok: 2014

Druh publikace: ostatní - přednáška nebo poster

Strana od-do: nestránkováno

Tituly:

Jazyk	Název	Abstrakt	Klíčová slova
eng	Stages in resistive switching of memory cells based on chalcogenides and nanoporous AAO	" A denser, faster and less energy-consuming non-volatile memory, which is based on resistive switching effect, has recently attracted significant attention [1], owing to their relatively simple structure and promising electrical performances [2]. Using an advanced design of resistive switching memory cells based on the Ag-filled porous AAO membrane and an ionic conductor AgxAsS2, we achieved in our recent work differences of 6 orders of magnitude in the resistivities [3]. Most recently, we have focused on further exploitation of different stages during resistive switching in the chalcogenide glass layer. Resistive switching was studied using our traditional experimental setup consisting of optical microscope connected to a measurement unit. Dependences of resistivities of “on” and “off” states for both cell types on number of cycle were recorded, and four different stages were identified. The evolvement of resistive switching might be induced by diffusion or depletion of Ag ion within the region of electrode. The presentation will discuss our most recent work and ideas. "	resistive switching of AAO

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