Publikace detail

Germanium-antimony-selenium-tellurium thin films: Clusters formation by laser ablation and comparison with clusters from mixtures of elements

Rok: 2022

Druh publikace: článek v odborném periodiku

Název zdroje: Journal of the American Ceramic Society

Název nakladatele: Wiley-Blackwell

Místo vydání: Hoboken

Strana od-do: 1992-2000

Tituly:

Jazyk	Název	Abstrakt	Klíčová slova
cze	Tenké vrstvy Germanium-Antimon-Selen-Tellur: Klastry tvořené laserovou ablací a srovnání s klastry ze směsí prvků	Kvarterní tenké vrstvy germanium-antimon-selen-tellur (Ge-Sb-Se-Te) připravené ze sklo-keramických terčů Ge19.4Sb16.7Se63.9-xTex (x = 5, 10, 15, and 20) pomocí radiofrekvenčního magnetronového naprašování byly studovány pomocí Time of Flight hmotnostní spektrometrie s kvadrupólovým analyzátorem a ionizací laserovou ablací. Byly vytvořené binární, ternární a kvartérní klastry jejichž stechiometrie byla stanovena.	amorfní chalkogenidy; klastry; Ge-Sb-Se-Te; laserová ablace; magnetronové naprašování; hmotnostní spektrometrie; tenké vrstvy
eng	Germanium-antimony-selenium-tellurium thin films: Clusters formation by laser ablation and comparison with clusters from mixtures of elements	Quaternary germanium-antimony-selenium-tellurium (Ge-Sb-Se-Te) thin films deposited from Ge19.4Sb16.7Se63.9-xTex (x = 5, 10, 15, and 20) glass-ceramics targets by radio frequency magnetron sputtering were studied using laser ablation quadrupole ion trap time of flight mass spectrometry. Binary, ternary, and quaternary GeaSbbSecTed clusters were formed and their stoichiometry was determined. By comparison of the clusters obtained from quaternary Ge-Sb-Se-Te thin films and those from ternary Ge-Sb-Te materials, we found that Ge-Te species are not detected from the quaternary system. Furthermore, Ge-Se and Se-Te species are missing in mass spectra generated from Ge-Sb-Se-Te thin films. From the Ge-Sb-Se-Te thin films, 16 clusters were detected while ternary Ge-Sb-Se glasses yielded 26 species. This might be considered as a signal of higher stability of Ge-Sb-Se-Te thin films which is increasing with a higher content of Te. The missing (Se-2(+), GeaSb+ (a = 1-4), and GeSec+ (c = 1, 2)) and new (Ge+ and SbbTe+ (b = 1-3)) clusters may indicate that some of the structural features of the films (Ge2Se6/2 and Se2Sb-SbSe2) were replaced by (GeSe4-x,Te-x and SbSe3-xTex) ones. In addition, when comparing the stoichiometry of clusters formed from Ge-Sb-Se-Te thin films with those from the mixtures of the elements, only Sb-3(+) and SbSe+ were observed in both cases. The knowledge gained concerning clusters stoichiometry contributes to the elucidation of the processes proceeding during plasma formation used for the chalcogenide thin films deposition.	amorphous chalcogenides; clusters; Ge-Sb-Se-Te; laser ablation; magnetron sputtering; mass spectrometry; thin films

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