Univerzita Pardubice Fakulta chemicko- technologická

Univerzita Pardubice

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Publikace detail

Cyclic Organo-selenides and tellurides for Atomic Layer Deposition

Autoři: Pokorný Daniel | Charvot Jaroslav | Klikar Milan | Bureš Filip

Rok: 2023

Druh publikace: ostatní - přednáška nebo poster

Strana od-do: nestránkováno

Tituly:

Jazyk	Název	Abstrakt	Klíčová slova
eng	Cyclic Organo-selenides and tellurides for Atomic Layer Deposition	The semiconducting metal selenides and tellurides thin films recently became intensively investigated in the field of material chemistry, because of their outstanding properties with great potential in electronic devices, light-activated chemical catalysis, or solar cells. Very thin, uniform and high-purity thin films are prepared by the Atomic Layer Deposition (ALD) method, where the gaseous ALD precursors react with the substrate surface. ALD offers great control over the obtained thickness and the coverage of both flat surfaces and heterostructures like nanotubes etc. Recently developed solution-ALD transfers the whole deposition process to the liquid phase and facilitate the selection of precursor and materials to be prepared.1 The selection of Se and Te precursors for ALD is very narrow, therefore this work aims to explore new ones. The proposed cyclic silyl-chalcogenides containing two Se or Te atoms would keep the essential parameters of an ALD precursor (sufficient reactivity, volatility, and thermal stability) and bring improved air-sensitivity, which is often a major drawback. Cyclic silyl derivatives 1–4 were prepared in a straightforward way from Li2Se and the corresponding dichlorosilanes in satisfactory yields. Furthermore, 1 was also prepared via a new method starting from inexpensive elemental Se. TG analysis and DSC were used to investigate their fundamental thermal behaviour. The prepared precursors were applied in ALD for successful deposition of Sb2Se3, MoSe2 and MoTe2 thin films.	Atomic Layer Deposition; ALD precursors; cyclic silyl-chalcogenides