Publikace detail

Magnetic and Transport Properties of the V2-VI3 Diluted Magnetic Semiconductor Sb2-xMnxTe3

Rok: 2003

Druh publikace: článek v odborném periodiku

Název zdroje: Journal of Applied Physics

Název nakladatele: American Institute of Physics

Místo vydání: Melville

Strana od-do: 7631-7635

Tituly:

Jazyk	Název	Abstrakt	Klíčová slova
cze	Magnetic and Transport Properties of the V2-VI3 Diluted Magnetic Semiconductor Sb2-xMnxTe3	We have measured electrical and magnetic properies of single crystals of Sb2-xMnxTe3 with x = 0-0.045 at temperatures of 2 K to 300 K. Hall effect measurements indicate that each manganese atom donates approximately one hole to the valence band. The magnetic susceptibility is paramagnetic down to 2 K, and both Curie-Weiss and Brillouin analyses show that manganese substitutes for Sb and takes the Mn2+ state with S = 5/2. Contrary to the case of III-V host matrices, manganese does not stimulate ferromagnetic order in the family of bulk layered V2-VI3 diluted magnetic semiconductors, at least in the range of magnetic impurity and carrier concentrations studied here.	diluted magnetic semiconductors;Mn-doped;antimony telluride
eng	Magnetic and Transport Properties of the V2-VI3 Diluted Magnetic Semiconductor Sb2-xMnxTe3	We have measured electrical and magnetic properies of single crystals of Sb2-xMnxTe3 with x = 0-0.045 at temperatures of 2 K to 300 K. Hall effect measurements indicate that each manganese atom donates approximately one hole to the valence band. The magnetic susceptibility is paramagnetic down to 2 K, and both Curie-Weiss and Brillouin analyses show that manganese substitutes for Sb and takes the Mn2+ state with S = 5/2. Contrary to the case of III-V host matrices, manganese does not stimulate ferromagnetic order in the family of bulk layered V2-VI3 diluted magnetic semiconductors, at least in the range of magnetic impurity and carrier concentrations studied here.	diluted magnetic semiconductors;Mn-doped;antimony telluride

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