Publikace detail

Transport Coefficients of Titanium-doped Sb2Te3 Crystals

Rok: 2005

Druh publikace: článek v odborném periodiku

Název zdroje: Journal of Solid State Chemistry

Název nakladatele: Academic Press (Elsevier)

Strana od-do: 1301-1307

Tituly:

Jazyk	Název	Abstrakt	Klíčová slova
cze	Transportní koeficienty monokrystalů Sb2Te3 s příměsí Ti.	Titanium-doped single crystals were prepared from the elements Sb, Ti, and Te of 5N purity by a modified Bridgman method. The obtained crystals were characterized by measurements of the temperature dependence of the electrical resistivity, Hall coefficient, Seebeck coefficient and thermal conductivity in the temperature range of 3-300 K. It was observed that with an increasing Ti content in the samples the electrical resistance, the Hall coefficient and the Seebeck coefficient increase. This means that the incorporation of Ti atoms into the Sb2Te3 crystal structure results in a decrease in the concentration of holes in the doped crystals. For the explanation of the observed effect a model of defects in the crystals is proposed. The data of the lattice thermal conductivity were fitted well assuming that phonons scatter on boundaries, point defects, charge carriers, and other phonons.
eng	Transport Coefficients of Titanium-doped Sb2Te3 Crystals	Titanium-doped single crystals were prepared from the elements Sb, Ti, and Te of 5N purity by a modified Bridgman method. The obtained crystals were characterized by measurements of the temperature dependence of the electrical resistivity, Hall coefficient, Seebeck coefficient and thermal conductivity in the temperature range of 3-300 K. It was observed that with an increasing Ti content in the samples the electrical resistance, the Hall coefficient and the Seebeck coefficient increase. This means that the incorporation of Ti atoms into the Sb2Te3 crystal structure results in a decrease in the concentration of holes in the doped crystals. For the explanation of the observed effect a model of defects in the crystals is proposed. The data of the lattice thermal conductivity were fitted well assuming that phonons scatter on boundaries, point defects, charge carriers, and other phonons.	Transport Coefficients, point defects, Sb(2-x)Ti(x)Te3 single crystals

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