Publikace detail

Substantial pressure effect on the resistivity and Curie temperature for the diluted magnetic semiconductor Sb2?xVxTe3

Autoři: Dyck J. F. | Ahilan K. | Aronson M.C. | Uher Ctirad | Lošťák Petr

Rok: 2006

Druh publikace: článek v odborném periodiku

Název zdroje: Physica Status Solidi B: Basic Solid State Physics

Název nakladatele: Wiley-VCH

Místo vydání: Weinheim

Strana od-do: 1862-1866

Tituly:

Jazyk	Název	Abstrakt	Klíčová slova
cze	Substantial pressure effect on the resistivity and Curie temperature for the diluted magnetic semiconductor Sb2?xVxTe3	The influence of hydrostatic pressure on the electrical resistivity ρ and ferromagnetic transition temperature TC of bulk, single crystal Sb1?xVxTe3 with x = 0.03 is presented. Pressure strongly suppresses ρ at all temperatures, with an overall decrease of about 35% at 1.6 GPa. The peak in ρ, a signature of TC, moves to lower temperature with increasing pressure. An overall suppression of TC near 40% at 1.6 GPa is observed. The results are discussed within the context of a carrier-mediated ferromagnetic exchange interaction.
eng	Substantial pressure effect on the resistivity and Curie temperature for the diluted magnetic semiconductor Sb2?xVxTe3	The influence of hydrostatic pressure on the electrical resistivity ρ and ferromagnetic transition temperature TC of bulk, single crystal Sb1?xVxTe3 with x = 0.03 is presented. Pressure strongly suppresses ρ at all temperatures, with an overall decrease of about 35% at 1.6 GPa. The peak in ρ, a signature of TC, moves to lower temperature with increasing pressure. An overall suppression of TC near 40% at 1.6 GPa is observed. The results are discussed within the context of a carrier-mediated ferromagnetic exchange interaction.	pressure effect resistivity diluted magnetic semiconductor

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