Publikace detail

Lattice defects in Cu doped Bi2Te3 single crystals

Autoři: Bludská J. | Jakubec I. | Drašar Čestmír | Lošťák Petr | Horák Jaromír

Rok: 2007

Druh publikace: článek v odborném periodiku

Název zdroje: Philosophical Magazine Part B

Název nakladatele: Taylor & Francis Ltd.

Místo vydání: Abingdon

Strana od-do: 325-335

Tituly:

Jazyk	Název	Abstrakt	Klíčová slova
cze	Lattice defects in Cu doped Bi2Te3 single crystals	Relations between the concentration of free charge carriers and the concentration of Cu atoms were studied on Bi2Te3 single crystals doped by copper in a wide range of the copper concentration with the aim to contribute to the clarification of the existence of inactive Cu ions embedded in the lattice of a Bi2Te3 crystal. We compare the changes in the concentrations of free charge carriers due to Cu-doping from melt with that of induced by electrochemical intercalation of copper. Models of possible defect structures of the Bi2Te3 crystals with admixtures of Cu atoms were proposed both for doped and intercalated single crystals.
eng	Lattice defects in Cu doped Bi2Te3 single crystals	Relations between the concentration of free charge carriers and the concentration of Cu atoms were studied on Bi2Te3 single crystals doped by copper in a wide range of the copper concentration with the aim to contribute to the clarification of the existence of inactive Cu ions embedded in the lattice of a Bi2Te3 crystal. We compare the changes in the concentrations of free charge carriers due to Cu-doping from melt with that of induced by electrochemical intercalation of copper. Models of possible defect structures of the Bi2Te3 crystals with admixtures of Cu atoms were proposed both for doped and intercalated single crystals.	tetradymite-type chalcogenides, Bi2Te3, Cu doping, Cu intercalation, defect structures

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