Publikace detail

Point and structural defects in Bi2PbxTe3 single crystals

Rok: 2007

Druh publikace: článek v odborném periodiku

Název zdroje: Solid State Ionics

Název nakladatele: Elsevier Science BV

Místo vydání: Amsterdam

Strana od-do: 3513-3519

Tituly:

Jazyk	Název	Abstrakt	Klíčová slova
cze	Point and structural defects in Bi2PbxTe3 single crystals	The study of the doping proces of Bi2Te3 by Pb atoms in wide range of lead concentration revealed two distinct areas of influence of the incorporated Pb atoms on changes in free carrier concentration. While at lower concentration of incorporated Pb the ratio of generated holes to one incorporated Pb atom fals from value of 1.6 down to 0.55, at higher concentration the value stays constant. The observed behaviour of seeming electrical inactivity of the incorporated Pb atoms is explained by a point defect model taking into account the interaction between the entering Pb atoms and native lattice defects of Bi2Te3 crystal structure.
eng	Point and structural defects in Bi2PbxTe3 single crystals	The study of the doping proces of Bi2Te3 by Pb atoms in wide range of lead concentration revealed two distinct areas of influence of the incorporated Pb atoms on changes in free carrier concentration. While at lower concentration of incorporated Pb the ratio of generated holes to one incorporated Pb atom fals from value of 1.6 down to 0.55, at higher concentration the value stays constant. The observed behaviour of seeming electrical inactivity of the incorporated Pb atoms is explained by a point defect model taking into account the interaction between the entering Pb atoms and native lattice defects of Bi2Te3 crystal structure.	Bismuth telluride Pb doping Point and structural defects

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